Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / Sadao Adachi.
Material type:
TextPublication details: New York : Wiley, c1992.Description: xviii, 318 p. : ill. ; 25 cmISBN: - 0471573299
- 537.6/226 ADA
| Item type | Current library | Call number | Status | Date due | Barcode |
|---|---|---|---|---|---|
|
|
Department of Physics | 537.6/226 ADA (Browse shelf(Opens below)) | Available | phy011134 |
Browsing Department of Physics shelves Close shelf browser (Hides shelf browser)
|
|
|
|
|
|
|
||
| 537.6/221 SHC Nanostructures / | 537.6/225 ASK Electron transport phenomena in semiconductors / | 537.6/225 THE Theory of transport properties of semiconductor nanostructures / | 537.6/226 ADA Physical properties of III-V semiconductor compounds : | 537.6/226 BAN Semiconductor quantum dots / | 537.6/226 GAP Optical properties of semiconductor nanocrystals / | 537.6/226 KIN Semiconductor optics / |

There are no comments on this title.