Modulation-Doped Field -Effect Transistors: Principles, Design and Technolgy.

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Material type: Text

TextPublication details: New York Institute of Electronics and Electrical Engineers 1991Edition: Description: xi, 523pISBN:

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Holdings
Item type	Current library	Call number	Status	Date due	Barcode
Reference	University Library	681.382.3:621.376 DAE R (Browse shelf(Opens below))	Not for loan		00043911

Published Under the Sponsorship of the IEEE Microwave theory and Techniques Society and the IEEE Electron Devices Society.

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