000 | 00627nam a2200241 a 4500 | ||
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001 | adlib96000001 | ||
003 | ViArRB | ||
005 | 20151026132309.0 | ||
008 | 960221s1955 dcuabcdjdbkoqu001 0deng d | ||
020 | _a9783540241638 | ||
022 | _a | ||
040 | _aAdlib | ||
082 | _a539.216 | ||
245 | _aFerroelectric thin films:basic properties and device physics for memory applications | ||
250 | _a | ||
260 |
_aBerlin _bSpringer _c2005 |
||
300 |
_axiii,244p. _c |
||
500 | _a | ||
100 |
_aOkuyama, Masanori _eed.by |
||
700 |
_aIshibashi, Yoshihiro _a |
||
942 | _cBK | ||
653 |
_aThin films _aFerroelectricity |
||
999 |
_c45667 _d45667 |