000 00627nam a2200241 a 4500
001 adlib96000001
003 ViArRB
005 20151026132309.0
008 960221s1955 dcuabcdjdbkoqu001 0deng d
020 _a9783540241638
022 _a
040 _aAdlib
082 _a539.216
245 _aFerroelectric thin films:basic properties and device physics for memory applications
250 _a
260 _aBerlin
_bSpringer
_c2005
300 _axiii,244p.
_c
500 _a
100 _aOkuyama, Masanori
_eed.by
700 _aIshibashi, Yoshihiro
_a
942 _cBK
653 _aThin films
_aFerroelectricity
999 _c45667
_d45667