000 | 00708nam a2200241 a 4500 | ||
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001 | adlib96000001 | ||
003 | ViArRB | ||
005 | 20151026132419.0 | ||
008 | 960221s1955 dcuabcdjdbkoqu001 0deng d | ||
020 | _a9781420043761 | ||
022 | _a | ||
040 | _aAdlib | ||
082 | _a621.3.049.77 | ||
245 | _aDefects in microelectronic materials and devices | ||
250 | _a | ||
260 |
_aLondon _bCRC _c2009 |
||
300 |
_axvi,753p. _c |
||
500 | _a | ||
100 |
_aFleetwood, Daniel M. _eed.by |
||
700 |
_aPantelides,Sokrates T. _aSchrimpf,Ronald D. |
||
942 | _cBK | ||
653 |
_aMicroelectronics-materials-testing _aMetal oxide semiconductor field effect transistors-testing _aIntegrated circuits-defects |
||
999 |
_c48244 _d48244 |