Modulation-Doped Field -Effect Transistors: Principles, Design and Technolgy.

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TextPublication details: New York Institute of Electronics and Electrical Engineers 1991Edition: Description: xi, 523pISBN:

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Item type	Current library	Call number	Status	Date due	Barcode
Reference	University Library	681.382.3:621.376 DAE R (Browse shelf(Opens below))	Not for loan		00043911

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Previous	681.382 EDW Studies on electrical and thermal properties of certain selected photonic materials	681.382 GEE Investigations on nonlinear and radiative properties of certain photonic materials	681.382 SAJ Laser induced photothermal inverstigations on thermal and transport properties of certain selected photonic materials	681.382.3:621.376 DAE R Modulation-Doped Field -Effect Transistors: Principles, Design and Technolgy.	681.382:535.14 UNN Z - scan and degenerate four wave mixing studies in certain photonic materials	681.391.81 MIN Signal processing fundamentals and applications for communications and sensing systems	681.3=M RAN Computer kalikkam computer padikkam	Next

Published Under the Sponsorship of the IEEE Microwave theory and Techniques Society and the IEEE Electron Devices Society.

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