Preparation and characterization of high-k aluminium oxide thin films by atomic layer deposition for gate dielectric applications
Anu philip
Preparation and characterization of high-k aluminium oxide thin films by atomic layer deposition for gate dielectric applications Anu Philip; guided by K. Rajeev Kumar - Kochi Department of Instrumentations; Cusat 2011 - 202p.
Dielectronics - high K-materials Atomic layer deposition of Aluminium oxide thin films MOS Capacitors
537.226:539.23 / ANU T
Preparation and characterization of high-k aluminium oxide thin films by atomic layer deposition for gate dielectric applications Anu Philip; guided by K. Rajeev Kumar - Kochi Department of Instrumentations; Cusat 2011 - 202p.
Dielectronics - high K-materials Atomic layer deposition of Aluminium oxide thin films MOS Capacitors
537.226:539.23 / ANU T